JPH021377B2 - - Google Patents

Info

Publication number
JPH021377B2
JPH021377B2 JP57008152A JP815282A JPH021377B2 JP H021377 B2 JPH021377 B2 JP H021377B2 JP 57008152 A JP57008152 A JP 57008152A JP 815282 A JP815282 A JP 815282A JP H021377 B2 JPH021377 B2 JP H021377B2
Authority
JP
Japan
Prior art keywords
conductivity type
well
type
mos transistor
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57008152A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58124269A (ja
Inventor
Hiroshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57008152A priority Critical patent/JPS58124269A/ja
Publication of JPS58124269A publication Critical patent/JPS58124269A/ja
Publication of JPH021377B2 publication Critical patent/JPH021377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57008152A 1982-01-21 1982-01-21 相補型絶縁ゲート電界効果半導体装置の製造方法 Granted JPS58124269A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008152A JPS58124269A (ja) 1982-01-21 1982-01-21 相補型絶縁ゲート電界効果半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008152A JPS58124269A (ja) 1982-01-21 1982-01-21 相補型絶縁ゲート電界効果半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58124269A JPS58124269A (ja) 1983-07-23
JPH021377B2 true JPH021377B2 (en]) 1990-01-11

Family

ID=11685340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008152A Granted JPS58124269A (ja) 1982-01-21 1982-01-21 相補型絶縁ゲート電界効果半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58124269A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770605B2 (ja) * 1985-09-03 1995-07-31 富士通株式会社 半導体装置の製造方法
JP2745228B2 (ja) * 1989-04-05 1998-04-28 三菱電機株式会社 半導体装置およびその製造方法
JP2730650B2 (ja) * 1990-06-11 1998-03-25 松下電子工業株式会社 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5725983B2 (en]) * 1973-12-27 1982-06-02
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS5949702B2 (ja) * 1978-12-18 1984-12-04 松下電器産業株式会社 半導体集積回路装置
JPS5694670A (en) * 1979-12-27 1981-07-31 Fujitsu Ltd Complementary type mis semiconductor device

Also Published As

Publication number Publication date
JPS58124269A (ja) 1983-07-23

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